| PART |
Description |
Maker |
| SHD626031 SHD626031D SHD626031N SHD626031P SHD6260 |
HERMETIC SILICON CARBIDE RECTIFIER 8 A, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA
|
Sensitron Semiconductor
|
| SHD620150P |
HERMETIC SILICON CARBIDE RECTIFIER 20 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| BYQ30E BYQ30E-150 BYQ30E-200 BYQ30EB-150 BYQ30EB-2 |
Ultra low drop voltage regulators compatible with low ESR inhibit output capacitors 整流二极管超快。崎
Rectifier diodes ultrafast, rugged 8 A, 150 V, SILICON, RECTIFIER DIODE
Rectifier diodes ultrafast, rugged 8 A, 200 V, SILICON, RECTIFIER DIODE
SERVSELECT PS/2 30FT CPU CABLE
Rectifier diodes ultrafast, rugged(超快速、强化的整流器二极管)
Rectifier diodes ultrafast/ rugged
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NXPSC10650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| NXPSC04650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| C3D08065I |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
| GAP05SLT80-220 |
Normally ?OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| C3M0280090D |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
| C4D10120E |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
| SDP04S6008 SDT04S60 SDD04S60 |
Silicon Carbide Schottky Diode
|
Infineon Technologies AG
Infineon Technologies A...
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